pchang718
66 lines
1.9 KiB
Python
66 lines
1.9 KiB
Python
# device_config.py
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# All units in cm (1 um = 1e-4 cm)
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um = 1e-4
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# --- Geometric Dimensions ---
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W_DEVICE = 356.0 * um # Half-width of the device (356 x 2 total width)
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H_SI = 200.0 * um # Silicon substrate thickness
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T_OX = 2.0 * um # Oxide thickness
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H_MOLD = 100.0 * um # Molding compound thickness (above oxide)
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W_SIDE_MOLD = 100.0 * um # Molding compound width on the sides
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W_SIM = W_DEVICE + W_SIDE_MOLD # Half-width of the total simulation domain
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# --- P-well parameters (p11, p12, p13) ---
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P_WELL_DEPTH = 5.0 * um # 5 um depth for all P-wells
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# P-well X boundaries (Right half, will be mirrored for left half)
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P11_X1 = 75.0 * um
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P11_X2 = 100.0 * um
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P12_X1 = 120.0 * um
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P12_X2 = 130.0 * um
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P13_X1 = 150.0 * um
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P13_X2 = 255.0 * um
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# --- N+ region parameters ---
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NPLUS_DEPTH = 0.1 * um # 1 um depth for all N+ regions
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# N+ X boundaries (Right half, mirrored for left half)
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NPLUS_X1 = 164.0 * um
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NPLUS_X2 = 185.0 * um
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# MRING X boundaries (Right half, mirrored for left half)
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MRING_X1 = 340.0 * um
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MRING_X2 = 356.0 * um
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# --- Doping Concentrations (cm^-3) ---
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N_SUB = 1.0e14 # 70 ~ 90 ohm cm (5.5e13)
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P11_PEAK = 4.0e15
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P12_PEAK = 6.50e14
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P13_PEAK = 4.0e15
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NPLUS_PEAK = 1.0e16
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# --- Doping Gradient / Diffusion Widths ---
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# P-well gradient widths
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P_WELL_VDDIFF = 2.5 * um # Vertical gradient width (characteristic depth)
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P_WELL_HDDIFF = 2.0 * um # Horizontal (lateral) gradient width
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# N+ gradient widths
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NPLUS_VDDIFF = 0.15 * um # Vertical gradient width
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NPLUS_HDDIFF = 0.1 * um # Horizontal (lateral) gradient width
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# --- Contact Vias Width and Positions (Right half, mirrored for left) ---
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VIA_WIDTH = 10.0 * um
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# Contact via center positions
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VIA_P11_X = 87.5 * um
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VIA_P13_X = 174.5 * um
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# --- Metal Field Plate X boundaries (Right half, mirrored for left) ---
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MT1_FP1_X1 = 30.0 * um
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MT1_FP1_X2 = 186.0 * um
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MT1_FP2_X1 = 250.0 * um
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MT1_FP2_X2 = 295.0 * um
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