pchang718
45 lines
2.0 KiB
Python
45 lines
2.0 KiB
Python
# device_config.py
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# All units in cm (1 um = 1e-4 cm)
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um = 1e-4
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# --- Geometric Dimensions ---
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W_DEVICE = 5.5 * um # Half-width of the simulation domain (9.5 x 2 = 19 um total)
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H_SI =15.0 * um # Silicon substrate thickness
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H_MOLD = 4.0 * um # Molding compound thickness above Si surface (Y=0)
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W_SIDE_MOLD = 0.0 * um # No side molding needed (mirror boundary at W_DEVICE)
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W_SIM = W_DEVICE + W_SIDE_MOLD # Half-width of total simulation domain
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# --- Thin Oxide and Field Oxide (FOX) ---
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TH_FOX = 1.0 * um # Field oxide thickness
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TH_GOX = 0.1 * um # Gate oxide thickness
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T_OX = TH_FOX # For backwards compatibility with standard scripts
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L_BEAK = 0.85 * um # Horizontal length of the bird's beak transition
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W_GOX = 0.25 * um # Half-length of the flat gate oxide (0.5 um total channel length)
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X_FOX_START = W_GOX + L_BEAK # Main body of FOX starts at 1.10 um
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X_FOX_END = 4.15 * um # Main body of FOX ends at 4.15 um (X_CON_START - L_BEAK)
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# --- Gate Poly Electrode ---
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X_GATE_END = 2.5 * um # Gate poly extends from center (0) to 4.0 um
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H_GATE = 1.0 * um # Gate poly height (top surface is at Y = -1.0 um)
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# --- Contact Openings ---
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X_CON_START = 5.0 * um # Contact opening starts at 8.5 um
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X_CON_END = 5.5 * um # Contact opening ends at 9.5 um
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H_CON = 2.5 * um # Contact height (top surface is at Y = -2.5 um)
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# --- Metal Overlayer ---
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X_MET_START = 1.5 * um # Metal overlayer starts at 1.5 um
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X_MET_END = 5.5 * um # Metal overlayer ends at 9.5 um
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H_MET = 1.5 * um # Metal thickness (top surface is at Y = -2.5 - 1.5 = -4.0 um)
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# --- Doping Concentrations (cm^-3) ---
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N_SUB = 5.0e13 # Substrate doping baseline (higher resistivity)
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# --- Fixed Contact N+ Doping Parameters (not overridden by PCAD) ---
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N_CON_PEAK = 1.0e20 # Peak concentration (cm^-3)
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N_CON_DEPTH = 0.15 * um # Vertical junction depth (vdiff)
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N_CON_HDDIFF = 0.1 * um # Lateral diffusion width (hdiff)
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# --- Simulation Metadata ---
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SIM_NAME = "LDMOS_Simulation"
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